Part Number | STGW25M120DF3 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Title | 1200V 25A low-loss M series IGBT |
Description | E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series I... |
Features |
• Maximum junction temperature: TJ = 175 °C • 10 μs of short-circuit withstand time • Low VCE(sat) = 1.85 V (typ.) @ IC = 25 A • Tight parameter distribution • Positive VCE(sat) temperature coefficient • Low thermal resistance • Soft- and fast-recove... |
Datasheet | STGW25M120DF3 Datasheet |