| Part Number | STGSB200M65DF2AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Title | IGBT |
| Description | This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which re... |
| Features |
• AEC-Q101 qualified • 6 μs of minimum short-circuit withstand time • VCE(sat) = 1.65 V (typ.) @ IC = 200 A • Tight parameter distribution • Positive VCE(sat) temperature coefficient • Low thermal resistance • Maximum junction temperature: TJ = 175 °... |
| Datasheet |
 STGSB200M65DF2AG Datasheet
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