| Part Number | STGB18N40LZ |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Title | EAS 180 mJ - 400 V - internally clamped IGBT |
| Description | This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter ... |
| Features |
■ AEC Q101 compliant ■ 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH ■ ESD gate-emitter protection ■ Gate-collector high voltage clamping ■ Logic level gate drive ■ Low saturation voltage ■ High pulsed current capability ■ Gate and gate-emitter ... |
| Datasheet |
 STGB18N40LZ Datasheet
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