| Part Number | MJD3055 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Title | Complementary Silicon Power Transistors |
| Description | The MJD2955 and MJD3055 form complementary PNP-NPN pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. 3... |
| Features |
nce Junction-case Rthj-amb Thermal Resistance Junction-ambient
Max Max
6.25 100
oC/W oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICEX ICBO
Collector Cut-off
VCE = 70 V
Current...
|
| Datasheet |
 MJD3055 Datasheet
|
