| Part Number | VTT9002 |
| Manufacturer | PerkinElmer Optoelectronics |
| Title | .040 NPN Phototransistors |
| Description | A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package. The chip is protected with a layer of clear epoxy... |
| Features |
Collector Breakdown VBR(CEO) lC = 100 µA H=0 Volts, Min. 30 30 Emitter Breakdown VBR(ECO) lE = 100 µA H=0 Volts, Min. 6.0 6.0 Saturation Voltage VCE(SAT) lC = 1.0 mA H = 400 fc Volts, Max. 0.55 0.55 Rise/Fall Time tR/tF lC = 1.0 mA RL = 100 Ω µsec, ...
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| Datasheet |
 VTT9002 Datasheet
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