| Part Number | MGW12N120D |
| Manufacturer | ON |
| Title | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGW12N120D/D ™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Dio... |
| Features |
rmination • Robust RBSOA IGBT & DIODE IN TO –247 12 A @ 90°C 20 A @ 25°C 1200 VOLTS SHORT CIRCUIT RATED C G C E G E CASE 340K –01 STYLE 4 TO –247AE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector –Emitter Voltage Collector –Gate... |
| Datasheet |
 MGW12N120D Datasheet
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