| Part Number | BLL1214-250R |
| Manufacturer | NXP (https://www.nxp.com/) Semiconductors |
| Title | LDMOS L-band radar power transistor |
| Description | Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source... |
| Features |
Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 36 V, an IDq of 150 mA, a tp of 1 ms with δ of 10 %: Output power = 250 W Power gain = 13 dB Efficiency = 47 % High power gain Easy power control Ex...
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| Datasheet |
 BLL1214-250R Datasheet
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