| Part Number | PHT1N60R |
| Manufacturer | NXP (https://www.nxp.com/) |
| Title | PowerMOS transistor |
| Description | N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capab... |
| Features |
Source-drain diode current (DC) Source-drain diode current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Tsp = 25 ˚C Tsp = 100 ˚C Tsp = 25 ˚C Tsp = 25 ˚C Tsp = 25 ˚C Tsp = 25 ˚C MIN. -55 MA...
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| Datasheet |
 PHT1N60R Datasheet
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