| Part Number | PHT1N52S |
| Manufacturer | NXP (https://www.nxp.com/) |
| Title | PowerMOS transistor |
| Description | N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capab... |
| Features |
rce-drain diode current (DC) Source-drain diode current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Tsp = 25 ˚C Tsp = 100 ˚C Tsp = 25 ˚C Tsp = 25 ˚C Tsp = 25 ˚C Tsp = 25 ˚C MIN. -55 MAX. ...
|
| Datasheet |
 PHT1N52S Datasheet
|
