| Part Number | BUT11F |
| Manufacturer | NXP (https://www.nxp.com/) |
| Title | Silicon Diffused Power Transistor |
| Description | High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated mounting base,intended for use in ... |
| Features |
ent peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 850 450 5 10 2 4 20 150 150 UNIT V V A A A A W ˚C ˚C
Ths ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL...
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| Datasheet |
 BUT11F Datasheet
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