| Part Number | BUK555-200A |
| Manufacturer | NXP (https://www.nxp.com/) |
| Title | PowerMOS transistor Logic level FET |
| Description | N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power ... |
| Features |
epetitive gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction Temperature CONDITIONS RGS = 20 kΩ tp ≤ 50 µs Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C M...
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| Datasheet |
 BUK555-200A Datasheet
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