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BUK552-100B

NXP
Part Number BUK552-100B
Manufacturer NXP (https://www.nxp.com/)
Title PowerMOS transistor
Description N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power ...
Features petitive gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction Temperature CONDITIONS RGS = 20 kΩ tp ≤ 50 µs Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MI...

Datasheet PDF File BUK552-100B Datasheet

BUK552-100B   BUK552-100B   BUK552-100B  




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