logo

2N5886

NTE
Part Number 2N5886
Manufacturer NTE
Title Silicon Power Transistor
Description The 2N5884 (PNP) and 2N5886 (NPN) are silicon complementary transistors designed for use in general purpose power amplifier and switching applica...
Features D Low Collector−Emitter Saturation Voltage: VCE(sat) = 1V (Max) at IC = 15A D Excellent DC Current Gain: hFE = 20 − 100 @ IC = 10A Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Datasheet PDF File 2N5886 Datasheet

2N5886   2N5886   2N5886  




logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map