| Description |
These products are N-channel MOS Field Effect Transistors designed for high current switching applications. |
| Features |
• Channel Temperature 175 degree rated www.DataSheet4U.com • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) (TO-262) RDS(on)3 = 11 mΩ MAX. (VGS = 4.5 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A) • Low input capacitance Ciss = 2600 pF TYP. (TO-263) The information in this document is subject to change... |
| Datasheet |
 NP80N03DDE Datasheet - 249.14KB |
