logo

MTB1N100E

Motorola
Part Number MTB1N100E
Manufacturer Motorola
Title TMOS POWER FET
Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB1N100E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Moun...
Features r bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. TMOS POWER FET 1.0 AMPERES 1000 VOLTS RDS(on) = 9.0 OHM ® D G CASE 418B
  –02, Style 2 D2...

Datasheet PDF File MTB1N100E Datasheet

MTB1N100E   MTB1N100E   MTB1N100E  




logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map