| Part Number | RD02MUS1B |
| Manufacturer | Mitsubishi Electric Semiconductor |
| Title | Silicon MOSFET Power Transistor |
| Description | < Silicon RF Power MOS FET (Discrete) > RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W ABSOLUTE MAXIMUM RATINGS (Tc... |
| Features |
High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz, 520MHz High Efficiency: 65%typ. (175MHz) High Efficiency: 65%typ. (520MHz)
0.2+/-0.05
0.9+/-0.1
Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm
www.Da...
|
| Datasheet |
 RD02MUS1B Datasheet
|
