| Part Number | RD16HHF1 |
| Manufacturer | Mitsubishi Electric |
| Title | Silicon MOSFET Power Transistor |
| Description | RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. FEATURES High power gain: Pout>16W, Gp>16dB @... |
| Features |
High power gain: Pout>16W, Gp>16dB @Vds=12.5V,f=30MHz Integrated gate protection diode
12.3+/-0.6 3.2+/-0.4
4.8MAX 9+/-0.4
OUTLINE DRAWING
9.1+/-0.7
3.6+/-0.2
2
1.2+/-0.4 0.8+0.10/-0.15
1.3+/-0.4
12.3MIN
APPLICATION
For output stage of high pow...
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| Datasheet |
 RD16HHF1 Datasheet
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