| Part Number | RD12MVP1 |
| Manufacturer | Mitsubishi Electric |
| Title | Silicon MOSFET Power Transistor |
| Description | RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. OUTLINE DRAWING FEATURES •High Power Gain P... |
| Features |
•High Power Gain Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz •High Efficiency: 55%min. (175MHz) •No gate protection diode INDEX MARK [Gate] (3.6) (4.5) 0.95+/-0.2 2.6+/-0.2 TOP VIEW DETAIL A SIDE VIEW 1.8+/-0.1 BOTTOM VIEW Terminal No. (a)Drain [outpu... |
| Datasheet |
 RD12MVP1 Datasheet
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