| Part Number | MGF0917A |
| Manufacturer | Mitsubishi Electric |
| Title | L & S BAND GaAs FET |
| Description | The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm(TYP.) @f=1.... |
| Features |
• High output power Po=24dBm(TYP.) @f=1.9GHz,Pin=4dBm • High power gain Gp=21dB(TYP.) @f=1.9GHz • High power added efficiency ηadd=38%(TYP.) @f=1.9GHz,Pin=4dBm • Hermetic Package APPLICATION • For UHF Band power amplifiers Fig.1 QUALITY • GG RECO... |
| Datasheet |
 MGF0917A Datasheet
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