| Part Number | MGF0912A |
| Manufacturer | Mitsubishi Electric |
| Title | L & S BAND GaAs FET |
| Description | The MGF0912A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. OUTLINE DRAWING Unit : millimeters FEATURES • H... |
| Features |
• High output power Po=41.5dBm(TYP.) @f=1.9GHz,Pin=33dBm • High power gain Gp=10.5dB(TYP.) @f=1.9GHz • High power added efficiency ηadd=38%(TYP.) @f=1.9GHz,Pin=33dBm • Hermetic Package ‡A ƒÓ2.2 0.6 •}0.2 ‡B ‡A APPLICATION • For L/S Band power amp... |
| Datasheet |
 MGF0912A Datasheet
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