| Part Number | MT4966 |
| Manufacturer | MOS-TECH |
| Title | Dual N-Channel Powe MOSFET |
| Description | This N-Channel MOSFET is produced using MOS-TECH Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching per... |
| Features |
Max rDS(on) = 102 mΩ at VGS = 10 V, ID = 2.7 A Max rDS(on) = 106 mΩ at VGS = 6 V, ID = 2.1 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used
surface mount package
100%...
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| Datasheet |
 MT4966 Datasheet
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