| Part Number | GTRB267008FC |
| Manufacturer | MACOM |
| Title | Thermally-Enhanced High Power RF GaN on SiC HEMT |
| Description | The GTRB267008FC is a 620-watt (P4dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier appli... |
| Features |
high efficiency, and a thermally-enhanced package with earless flange.
Package Type: H-37248KC-6/2
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 1000 mA, VGS(PEAK) = -4.8 V, ƒ = 2690 MHz, 3GPP W...
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| Datasheet |
 GTRB267008FC Datasheet
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