| Part Number | GTRB266908FC |
| Manufacturer | MACOM |
| Title | Thermally-Enhanced High Power RF GaN on SiC HEMT |
| Description | The GTRB266908FC is a 630-watt (P4dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplif... |
| Features |
high efficiency, and a thermally-enhanced package with earless flange.
Package Types: H-37248KC-6/2 PN: GTRB266908FC
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(Main) = 1000 mA, VGS(Peak) = -4.7 V, ƒ ...
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| Datasheet |
 GTRB266908FC Datasheet
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