| Part Number | KMB6D0DN30QB |
| Manufacturer | KEC |
| Title | Dual N-Channel MOSFET |
| Description | This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteris... |
| Features |
VDSS=30V, ID=6A. Drain-Source ON Resistance. RDS(ON)=28m (Max.) @VGS=10V RDS(ON)=42m (Max.) @VGS=4.5V Super High Dense Cell Design High Power and Current Handing Capability
MAXIMUM RATING (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL PATING...
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| Datasheet |
 KMB6D0DN30QB Datasheet
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