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IRFBC30S

International Rectifier
Part Number IRFBC30S
Manufacturer International Rectifier
Title Power MOSFET
Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, ...
Features m Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V… Continuous Drain Current, VGS @ 10V… Pulsed Drain Current … Power Dissipation Power Dissipation Lin...

Datasheet PDF File IRFBC30S Datasheet

IRFBC30S   IRFBC30S   IRFBC30S  




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