| Part Number | F1010N |
| Manufacturer | International Rectifier |
| Title | Power MOSFET |
| Description | Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sili... |
| Features |
= 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, V GS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Dio...
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| Datasheet |
 F1010N Datasheet
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