| Part Number | IPI086N10N3 |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Title | Power-Transistor |
| Description | IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R... |
| Features |
• N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO 252) ID 100 V 8.2 mW 80 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qua... |
| Datasheet |
 IPI086N10N3 Datasheet
|
