Description | BSZ120P03NS3E G OptiMOSTM P3 Power-Transistor Features • single P-Channel in S3O8 • Qualified according JEDEC 1) for target applications • 150 °C operating temperature • V GS=25 V, specially suited for notebook applications • Pb-free; RoHS compliant • ESD protected • applications: battery management, load switching • Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID -3... |
Features |
• single P-Channel in S3O8 • Qualified according JEDEC 1) for target applications • 150 °C operating temperature • V GS=25 V, specially suited for notebook applications • Pb-free; RoHS compliant • ESD protected • applications: battery management, load switching • Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID -30 12 -... |
Datasheet | BSZ120P03NS3EG Datasheet - 321.83KB |