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BSZ120P03NS3EG Infineon (https://www.infineon.com/) Power MOSFET

Description BSZ120P03NS3E G OptiMOSTM P3 Power-Transistor Features • single P-Channel in S3O8 • Qualified according JEDEC 1) for target applications • 150 °C operating temperature • V GS=25 V, specially suited for notebook applications • Pb-free; RoHS compliant • ESD protected • applications: battery management, load switching • Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID -3...
Features
• single P-Channel in S3O8
• Qualified according JEDEC 1) for target applications
• 150 °C operating temperature
• V GS=25 V, specially suited for notebook applications
• Pb-free; RoHS compliant
• ESD protected
• applications: battery management, load switching
• Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID -30 12 -...

Datasheet PDF File BSZ120P03NS3EG Datasheet - 321.83KB

BSZ120P03NS3EG  






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