| Part Number | 2ED2109S06F |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Title | 650V half bridge gate driver |
| Description | The 2ED2109 (4) S06F (J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.... |
| Features |
• Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology • Negative VS transient immunity of 100 V • Floating channel designed for bootstrap operation • Operating voltages (VS node) upto + 650 V • Maximum bootstrap voltage (VB node) of + 675... |
| Datasheet |
 2ED2109S06F Datasheet
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