| Part Number | MJL21194G |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) High DC Current Gain – hFE = 25 Min @ IC = 8 Adc ·Complement to Type MJL21193 ·Mi... |
| Features |
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8.0A; IB= 0.8A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -16A; IB= -3.2A
VBE(on)
Base-Emitte...
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| Datasheet |
 MJL21194G Datasheet
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