| Part Number | MJD31C |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·DC Current Gain -hFE = 25(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min) ·Complement to Type MJD32C ·DPAK for Surface ... |
| Features |
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isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB...
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| Datasheet |
 MJD31C Datasheet
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