| Part Number | MJD210 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistor |
| Description | ·High DC Current Gain- : hFE = 70(Min) @ IC= -0.5A ·Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A ·Complement to the NPN ... |
| Features |
Website：www.iscsemi.com
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isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MJD210
MIN MAX UNIT
VCEO(SUS) Collector-Emitter Sustai...
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| Datasheet |
 MJD210 Datasheet
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