| Part Number | MJD127 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Darlington Power Transistor |
| Description | ·Low Collector-Emitter saturation voltage ·Lead formed for surface mount applications ·High DC current gain ·100% tested ·Minimum Lot-to-Lot varia... |
| Features |
ICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage
VCE(sat)-2 Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emit...
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| Datasheet |
 MJD127 Datasheet
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