| Part Number | MJD112 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·High DC current gain ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“－I”suffix) ·Built-in a damper diode at E-C ·100%... |
| Features |
mi.com
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
MJD112
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)-1* Collector-Emitter S...
|
| Datasheet |
 MJD112 Datasheet
|
