| Part Number | KTD998 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistors |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type KTB778 ·Minimum Lot-to-Lot variations for r... |
| Features |
50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A
VBE(on)
Base-Emitter On Voltage
IC= 5A ; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 120V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
...
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| Datasheet |
 KTD998 Datasheet
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