| Part Number | KTD2061 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistors |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ (IC= 0.5A, IB= 50mA) ·C... |
| Features |
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA
VBE(on) Base-Emitter On Voltage
IC= 0.5A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= ...
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| Datasheet |
 KTD2061 Datasheet
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