| Part Number | KTD2060 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistors |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector Power Dissipation- : PC= 25W@ TC= 25℃ ·Low Collector Saturation Voltage- : V... |
| Features |
ollector-Emitter Breakdown Voltage IC= 50mA; IB= 0
V(BR)EBO Emitter –Base Breakdown Voltage IE= 1mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 5V ICBO Collector Cutoff Cur... |
| Datasheet |
 KTD2060 Datasheet
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