| Part Number | KSD985 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·Collector–Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min.) ·DC Current Gain- : hFE = 2000(Min) @ IC= 1A ·Low Collector Saturation Voltage APPLI... |
| Features |
ONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 1mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 1mA
ICBO Collector Cutoff Current
VCB= 60V; IE= 0
ICER Collector Cutoff Current
VCE=60V;RBE=51Ω;TC=...
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| Datasheet |
 KSD985 Datasheet
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