| Part Number | IRF360 |
| Manufacturer | Inchange Semiconductor |
| Title | N-Channel MOSFET Transistor |
| Description | ·silicon Gate for fast switching at elevate ·rugged APPLICATIONS ·suited for applications such as Switching power supplies,motor controls ,invert... |
| Features |
ETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=0.25mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID=250µA
RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=14A
IGSS Gate Source Leakage Current
VGS=±20V;VDS=0
IDSS Zero Gate...
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| Datasheet |
 IRF360 Datasheet
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