| Part Number | IRF353 |
| Manufacturer | Inchange Semiconductor |
| Title | N-Channel MOSFET Transistor |
| Description | ·silicon Gate for fast switching at elevate ·rugged APPLICATIONS ·high voltage,high speed applications such as off-line Switching power supplies,... |
| Features |
IONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=0.25mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID=250µA
RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=8A
IGSS Gate Source Leakage Current
VGS=±20V;VDS=0
IDSS Zero Gate Voltage Drai...
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| Datasheet |
 IRF353 Datasheet
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