| Part Number | D1576 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·High Collector-Base Breakdown Voltage: V(BR)CBO= 1500V (Min.) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for hori... |
| Features |
wise specified SYMBOL PARAMETER CONDITIONS MIN
2SD1576
TYP.
MAX
UNIT
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 2A; IB= 1A
B
5.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 2A; IB= 1A
B
1.5
V
V(BR)EBO
Emitter-Base Breakdown ...
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| Datasheet |
 D1576 Datasheet
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