| Part Number | C5386 |
| Manufacturer | Inchange Semiconductor |
| Title | NPN Power Transistor |
| Description | ·High Breakdown Voltage ·High Switching Speed ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device perf... |
| Features |
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
600
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB= 1.5A
ICBO
Collec...
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| Datasheet |
 C5386 Datasheet
|
