logo

BU112

Inchange Semiconductor
Part Number BU112
Manufacturer Inchange Semiconductor
Title Silicon NPN Power Transistor
Description ·Collector-Emitter Voltage- :VCEX(SUS) = 550V(Min.) ·Collector Current- IC= 10A ·Minimum Lot-to-Lot variations for robust device performance and r...
Features MBOL PARAMETER CONDITIONS V(BR)EBO Collector-Base Breakdown Voltage IE= 30mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2A ICEX Collector Cutoff Current VCE= 550V; VBE= -5V hFE DC Current Gain IC= 6A; VCE= 2V fT Cur...

Datasheet PDF File BU112 Datasheet

BU112   BU112   BU112  




logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map