| Part Number | BDY58S |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 125V(Min) ·High Power Dissipation ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variat... |
| Features |
BOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB= 0
125
V
V(BR)CBO Collector- Base Breakdown Voltage IC= 1mA ; IE= 0
160
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA ; IC= 0
10
...
|
| Datasheet |
 BDY58S Datasheet
|
