| Part Number | BDY26C |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ IC = 2A ·High Switching... |
| Features |
ed
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.25A
VBE(sat) Base-Emitter Saturat...
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| Datasheet |
 BDY26C Datasheet
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