| Part Number | BDT60 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistor |
| Description | ·DC Current Gain -hFE = 750(Min)@ IC= -1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60; -80V(Min)- BDT60A; -100V(Min)- ... |
| Features |
CTERISTICS
SYMBOL
PARAMETER
-65~150 MAX
Rth j-c Thermal Resistance,Junction to Case
2.5
Rth j-c Thermal Resistance,Junction to Ambient 62.5
℃
UNIT ℃/W ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP D...
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| Datasheet |
 BDT60 Datasheet
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