| Part Number | BDS16 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·High Voltage: VCEV= 120V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 4A ·High Reliablity ·Minimum Lot-to-Lot variations for robust d... |
| Features |
wer Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VCE(sat)-2 ...
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| Datasheet |
 BDS16 Datasheet 210.32KB |
