| Part Number | BD644 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Darlington Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Low Saturation Voltage ·Complement to ... |
| Features |
tion to Ambient
70
℃/W
isc website：www.iscsemi.com
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isc Silicon PNP Darlington Power Transistor
BD644
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. ...
|
| Datasheet |
 BD644 Datasheet 193.69KB |
