| Part Number | BD263 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 60V ·DC Current Gain— : hFE = 750(Min) @ IC= 1.5 A ·Minimum Lot-to-Lot variations for robust de... |
| Features |
e specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 30mA
VBE(on) Base-Emitter On Voltage
IC= 1.5A; VCE= 3V
ICEO
Collector Cutoff Cur...
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| Datasheet |
 BD263 Datasheet
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