| Part Number | 3DD7E |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 3.75A APPLICATIONS ·... |
| Features |
R)CEO Collector-Emitter Breakdown Voltage IC= 3mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 2mA; IC= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 3mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3.75A; IB= 0.38A
ICEO Col...
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| Datasheet |
 3DD7E Datasheet
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